The influence of the deep level type on a switching time delay of GaAs avalanche S-diodes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/1124/i=7/a=071013/pdf
Reference17 articles.
1. Gallium arsenide avalanche s-diodes
2. Switching avalanche S-diodes based on GaAs multilayer structures
3. A new type of pulse-generating diode in GaAs
4. The effect of base thickness on the reverse volt–ampere characteristic of an S-diode
5. Charge Carrier Transport and Deep Levels Recharge in Avalanche S-Diodes Based on GaAs
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1. Avalanche Delay and Dynamic Triggering in GaAs-Based S-Diodes Doped With Deep Level Impurity;IEEE Transactions on Electron Devices;2021-01
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