Gallium arsenide avalanche s-diodes-Reference-Cited by-同舟云学术

Gallium arsenide avalanche s-diodes

Published:1983-10 Issue:10 Volume:26 Page:928-937
ISSN:0038-5697
Container-title:Soviet Physics Journal
language:en
Short-container-title:Soviet Physics Journal

Author:

Khludkov S. S.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/BF00896647.pdf

Reference67 articles.

1. A. G. Milnes, Deep Impurities in Semiconductors, Wiley (1973).

2. E. M. Omel'yanovskii and V. I. Fistul', Transition Metal Impurities in Semiconductors [in Russian], Metallurgiya, Moscow (1983); E. M. Omel' yanovskii, O. V. Pelevin, and N. N. Solov' ev, High Resistance Gallium Arsenide [in Russian], Giredmet, Moscow (1972).

3. S. S. Khludkov, in: Gallium Arsenide (6th edn.) [in Russian], Tomsk. Gos. Univ., Tomsk (1975), p. 161.

4. M. I. Markovich and E. N. Vologdin, Elektron. Tekh., Ser. Poluprovodn. Prib., No. 5/6, 138 (1978); A. Ya. Krauz, M. I. Markovich, A. B. Polyanov, O. I. Furina, and O. V. Chkalova, Elektron. Tekh., Ser. Poluprovodn. Prib., No. 1, 89 (1979).

5. L. S. Sibirtsov, Elektron. Tekh., Ser. Poluprovodn. Prib., No. 1, 63 (1983).

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