The effect of base thickness on the reverse volt–ampere characteristic of an S-diode-Reference-Cited by-同舟云学术

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The effect of base thickness on the reverse volt–ampere characteristic of an S-diode

Published:2009-02 Issue:2 Volume:52 Page:163-169
ISSN:1064-8887
Container-title:Russian Physics Journal
language:en
Short-container-title:Russ Phys J

Author:

Prudaev I. A.,Khludkov S. S.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/s11182-009-9204-9.pdf

Reference18 articles.

1. S. S. Khludkov, Sov. Phys. J., No. 10, 928 (1983).

2. V. I. Gaman, Sov. Phys. J., No.10, 938 (1983).

3. O. P. Tolbanov and S. S. Khludkov, Fiz. Tekh. Poluprovodn., 20, No. 11, 2072 (1986).

4. S. S. Khludkov and O. P. Tolbanov, Russ. Phys. J., No. 9, 806 (1992).

5. D. D. Karimbaev, A. V. Koretskii, Yu. D. Pavlov, et al., Electron. Prom., No. 9, 62 (1993).

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