Reliability study on green InGaN/GaN light emitting diodes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/209/i=1/a=012065/pdf
Reference7 articles.
1. Prestrained effect on the emission properties of InGaN∕GaN quantum-well structures
2. Noise as a representation for reliability of light emitting diode
3. 1/f noise sources
4. The fundamental 1/f noise and the Hooge parameter in semiconductor quantum wires
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