Influences of graded superlattice on the electrostatic discharge characteristics of green InGaN/GaN light-emitting diodes-Reference-Cited by-同舟云学术

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Influences of graded superlattice on the electrostatic discharge characteristics of green InGaN/GaN light-emitting diodes

Published:2017-04 Issue: Volume:464 Page:138-142
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lee Kwanjae,Lee Cheul-Ro,Chung Tae-Hoon,Park Jinyoung,Leem Jae-Young,Jeong Kwang-Un,Kim Jin Soo

Funder

Ministry of Science, ICT and Future Planning

Ministry of Education

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. Solid-state light sources getting smart;Schubert;Science,2005

2. Effects of dislocations on the carrier transport and optical properties of GaN films grown with an in-situ SiNx insertion layer;Lee;Electron. Mater. Lett.,2012

3. Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes;Chang;IEEE Electron Device Lett.,2003

4. Nitride based LEDs with modulation doped Al0.12Ga0.88N/GaN superlattice structures;Wen;IEEE Trans. Electron Devices,2004

5. ESD engineering of nitride-based LEDs;Su;IEEE Trans. Device Mater. Rel.,2005

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1. Defects and Reliability of GaN‐Based LEDs: Review and Perspectives;physica status solidi (a);2022-02-24

2. Flexible 1.3 μm photodetector fabricated with InN nanowires and graphene on overhead projector transparency sheet;Nanoscale;2022

3. Epitaxial Growth of III-Nitride LEDs;III-Nitride LEDs;2022

4. Investigation of Photonic-Crystal-Structured p-GaN Nanorods Fabricated by Polystyrene Nanosphere Lithography Method to Improve the Light Extraction Efficiency of InGaN/GaN Green Light-Emitting Diodes;Materials;2021-04-25

5. Effect of Strains and V-Shaped Pit Structures on the Performance of GaN-Based Light-Emitting Diodes;Crystals;2020-04-17

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