Bipolar resistive switching in metal-insulator-semiconductor nanostructures based on silicon nitride and silicon oxide-Reference-Cited by-同舟云学术

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Bipolar resistive switching in metal-insulator-semiconductor nanostructures based on silicon nitride and silicon oxide

Published:2018-03 Issue: Volume:993 Page:012028
ISSN:1742-6588
Container-title:Journal of Physics: Conference Series
language:
Short-container-title:J. Phys.: Conf. Ser.

Author:

Koryazhkina M N,Tikhov S V,Mikhaylov A N,Belov A I,Korolev D S,Antonov I N,Karzanov V V,Gorshkov O N,Tetelbaum D I,Karakolis P,Dimitrakis P

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

http://stacks.iop.org/1742-6596/993/i=1/a=012028/pdf

Reference22 articles.

1. Memristor-The missing circuit element

2. The forming process in resistive-memory elements based on metal-insulator-semiconductor structures

3. Light-induced resistive switching in silicon-based metal–insulator–semiconductor structures

4. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

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1. Memory Properties of SiOx- and SiNx-Based Memristors;Nanobiotechnology Reports;2021-11

2. Impact of O2 plasma treatment on novel amorphous oxide InWZnO on conductive bridge random access memory;Surface and Coatings Technology;2021-09

3. Charge transport mechanism in the forming-free memristor based on silicon nitride;Scientific Reports;2021-01-28

4. Electronic structure and charge transport mechanism in a forming-free SiO x -based memristor;Nanotechnology;2020-10-06

5. Fabrication and characterization of metal insulator semiconductor Ag/PVA/GO/PVA/n-Si/Ag device;Microelectronic Engineering;2020-09

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