Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers-Reference-Cited by-同舟云学术

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Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

Published:2014-09-28 Issue:12 Volume:116 Page:123705
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Jiang Xiaofan¹,Ma Zhongyuan¹,Yang Huafeng¹,Yu Jie¹,Wang Wen¹,Zhang Wenping¹,Li Wei¹,Xu Jun¹,Xu Ling¹,Chen Kunji¹,Huang Xinfan¹,Feng Duan¹

Affiliation:

1. National Laboratory of Solid State Microstructures, Jiangsu Provincial Key Laboratory of Photonic Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China

Funder

the Fundamental Research Funds for the Central Universities

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4896552

Reference27 articles.

1. Future challenges of flash memory technologies

2. Nanoionics-based resistive switching memories

3. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

4. Nonvolatile Memories as the Data Storage System for Implantable ECG Recorder

5. Y. Chen , W. Tian , H. Li , X. Wang , and W. Zhu , in International Symposium on Quality Electronic Design—ISQED (2010), p. 327.

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