Luminescence of a-screw dislocations in low-ohmic GaN
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/690/i=1/a=012008/pdf
Reference19 articles.
1. Luminescence properties of defects in GaN
2. Dislocation Luminescence in Wurtzite GaN
3. Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope
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2. Crystal Lattice Defects as Natural Light Emitting Nanostructures in Semiconductors;Springer Series in Chemical Physics;2019
3. Investigation of the Effect of Electron-Beam Irradiation on the Defect Structure of Laterally Overgrown GaN Films via the Induced-Current and Cathodoluminescence Methods;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2018-09
4. Intrinsic luminescence and core structure of freshly introduced a-screw dislocations in n-GaN;Journal of Applied Physics;2018-04-28
5. Intersection Nodes of Basal Screw Dislocations as Luminous Quantum Dots in GaN;physica status solidi (RRL) - Rapid Research Letters;2017-10-09
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