Author:
Shreter Y. G.,Rebane Y. T.,Davis T. J.,Barnard J.,Darbyshire M.,Steeds J. W.,Perry W. G.,Bremser M. D.,Davis R. F.
Abstract
ABSTRACTThe 364 nm PL-system in GaN is attributed to the formation of dislocation excitons and charged dislocation excitons on c-axis screw dislocations. The binding energy for the dislocation exciton, charged dislocation exciton and a hole on the screw dislocation were determined as 35 meV, 7 meV and 65 meV respectively, in accord with experiment.
Publisher
Springer Science and Business Media LLC
Cited by
22 articles.
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