Effect of MeV electron irradiation on Si-SiO2structures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/514/i=1/a=012039/pdf
Reference7 articles.
1. Crystallisation of Ge nanoclusters in SiO2 caused by electron irradiation in TEM
2. Irradiation effects of 6MeV electron on electrical properties of Al/Al2O3/n-Si MOS capacitors
3. Formation of crystalline Si nanodots in SiO2 films by electron irradiation
4. Influence of the ambient on radiation-induced effects during high-energy electron irradiation of MOS structures
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Densification of SiO2 films via low-energy electron-beam irradiation;Materials Letters;2022-08
2. Transformation of SiO2 to amorphous silicon caused by high-energy electrons;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2021-05
3. Changes in composite nc-Si-SiO2 thin films caused by 20 MeV electron irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-11
4. Influence of 20 MeV electron irradiation on the optical properties and phase composition of SiOx thin films;Journal of Applied Physics;2018-05-21
5. High energy electron-beam irradiation effects in Si-SiOxstructures;Journal of Physics: Conference Series;2016-02-09
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