Influence of 20 MeV electron irradiation on the optical properties and phase composition of SiOx thin films-Reference-Cited by-同舟云学术

Influence of 20 MeV electron irradiation on the optical properties and phase composition of SiOx thin films

Published:2018-05-21 Issue:19 Volume:123 Page:195303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Hristova-Vasileva Temenuga¹,Petrik Peter²^ORCID,Nesheva Diana¹,Fogarassy Zsolt²,Lábár János²^ORCID,Kaschieva Sonia¹,Dmitriev Sergei N.³,Antonova Krassimira¹

Affiliation:

1. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria

2. Centre for Energy Research, Hungarian Academy of Sciences, H-l12l Budapest, Konkoly Thege Miklos ut 29-33, Hungary

3. Joint Institute for Nuclear Research, Flerov Laboratory of Nuclear Reactions, Dubna, Moscow Region 141980, Russia

Funder

Országos Tudományos Kutatási Alapprogramok

European Regional Development Fund

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5022651

Reference60 articles.

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2. In situ measurement of the crystallization of amorphous silicon in a vertical furnace using spectroscopic ellipsometry

3. N. T. Fourches , Current Topics in Ionizing Radiation Research ( InTech, Rijeka, 2012), Chap. 32, p. 741.

4. Radiation Synthesis of Materials and Compounds

5. A silicon nanocrystals based memory

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