Fluorescence EXAFS study of residual Ga in β-FeSi2grown from Ga solvent
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/190/i=1/a=012069/pdf
Reference7 articles.
1. Effects of Ti, Nb and Zr doping on thermoelectric performance of β-FeSi2
2. Effects of Cu addition on the thermoelectric properties of hot-pressed β-FeSi2 with SiC dispersion
3. Microstructures and thermoelectric properties of Fe0.92Mn0.08Six alloys prepared by rapid solidification and hot pressing
4. Growth conditions of β-FeSi2 single crystals by chemical vapor transport
5. Electrical properties of p-type β-FeSi2 single crystals grown from Ga and Zn solvents
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1. Investigation of electrical transport properties in heterojunctions comprised of silicon substrate and nanocrystalline iron disilicide films;International Journal of Nanotechnology;2016
2. Current Transport Mechanism of n-Type Nanocrystalline FeSi2/Intrinsic Si/p-Type Si Heterojunctions Fabricated by Facing-Targets Direct-Current Sputtering;Advanced Materials Research;2013-09
3. n-Type Nanocrystalline FeSi2/intrinsic Si/p-Type Si Heterojunction Photodiodes Fabricated by Facing-Target Direct-Current Sputtering;Japanese Journal of Applied Physics;2012-02-01
4. n-Type Nanocrystalline FeSi$_{2}$/intrinsic Si/p-Type Si Heterojunction Photodiodes Fabricated by Facing-Target Direct-Current Sputtering;Japanese Journal of Applied Physics;2012-01-30
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