Oxygen precipitate positive charge evolution upon annealing of oxygen implanted silicon

Abstract

Abstract Oxygen precipitates (OPs) formed by the annealing of oxygen implanted silicon samples at diverse temperatures in the ranges from 700°C to 1100°С have been investigated with capacitance-voltage and transmission electron microscopy techniques. An increase of the OP sizes with the increasing temperature was found to accompany with a decrease of the OP embedded positive charge being inversely proportional to the formers. The obtained result showed that the positive charge is localized in SiOx shell of predominantly stoichiometric OP core.