On the sensitivity of positron annihilation signals to alloy homogeneity in InxGa1-xN
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/505/i=1/a=012042/pdf
Reference45 articles.
1. Defect identification in semiconductors with positron annihilation: Experiment and theory
2. Construction of Electron-Positron Momentum Density from Pseudo-Wavefunctions with Better Accuracy
3. Calculation of valence electron momentum densities using the projector augmented-wave method
4. Modeling the momentum distributions of annihilating electron-positron pairs in solids
5. Ab initiocalculations of electric-field-induced stress profiles for diamond/c−BN(110) superlattices
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Perspective on defect characterization in semiconductors by positron annihilation spectroscopy;Journal of Applied Physics;2024-01-23
2. Computational study of positron annihilation parameters for cation mono-vacancies and vacancy complexes in nitride semiconductor alloys;Journal of Physics: Condensed Matter;2019-08-20
3. Radiation-induced alloy rearrangement in InxGa1−xN;Applied Physics Letters;2017-03-27
4. Computational studies of positron states and annihilation parameters in semiconductors – vacancy-type defects in group-III nitrides –;Journal of Physics: Conference Series;2016-01-26
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