Radiation-induced alloy rearrangement in InxGa1−xN-Reference-Cited by-同舟云学术

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Radiation-induced alloy rearrangement in InxGa1−xN

Published:2017-03-27 Issue:13 Volume:110 Page:132104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Prozheeva V.¹,Makkonen I.¹^ORCID,Cuscó R.²,Artús L.²,Dadgar A.³^ORCID,Plazaola F.⁴,Tuomisto F.¹

Affiliation:

1. Department of Applied Physics, Aalto University School of Science, P.O. Box 15100, FI-00076 Aalto, Finland

2. Institut Jaume Almera (ICTJA-CSIC), Consejo Superior de Investigaciones Cientificas, 08028 Barcelona, Spain

3. Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, 39016 Magdeburg, Germany

4. Elektrizitatea eta Elektronika Saila, UPV-EHU, P.K. 644, 48080 Bilbao, Spain

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4979410

Reference41 articles.

1. Band gap engineering approaches to increase InGaN/GaN LED efficiency

2. Phase separation in strained epitaxial InGaN islands

3. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system

4. High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm

5. High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

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3. Quantum Monte Carlo study of Doppler broadening of positron annihilation radiation in semiconductors and insulators;Physical Review B;2023-07-19

4. Vacancy Defects in Bulk and Quasi-Bulk GaN Crystals;Crystals;2022-08-09

5. Identification of Point Defects in Multielement Compounds and Alloys with Positron Annihilation Spectroscopy: Challenges and Opportunities;physica status solidi (RRL) – Rapid Research Letters;2021-08-05

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