Computational studies of positron states and annihilation parameters in semiconductors – vacancy-type defects in group-III nitrides –
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/674/i=1/a=012020/pdf
Reference25 articles.
1. Positron Annihilation in Semiconductors
2. Defect identification in semiconductors with positron annihilation: Experiment and theory
3. Positron Annihilation Spectroscopy on Nitride-Based Semiconductors
4. Defects in nitride-based semiconductors probed by positron annihilation
5. First-principles calculation of positron states and annihilation parameters for group-III nitrides
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