Structural study of Ge/GaAs thin films
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/371/i=1/a=012040/pdf
Reference10 articles.
1. Ge Epitaxial Growth on GaAs Substrates for Application to Ge-Source/Drain GaAs MOSFETs
2. Growth mode of Ge on GaAs(100)
3. Initial stages of Ge/GaAs(100) interface formation
4. Some observations on Ge:GaAs(001) and GaAs:Ge(001) interfaces and films
5. Ge/GaAs(001) interface formation investigated by reflectance anisotropy spectroscopy
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