Electrical Transport Properties of Few-Layer SnS2 Field-effect Transistors

Abstract

After the discovery of graphene in 2004, two dimensional (2D) materials have fascinated a lot of view due to the excellent properties. Nowadays, the research on 2D materials has spread to other graphene-like layer structured materials, especially transition metal dichalcogenides (TMDCs). Tin disulfide (SnS2) is a kind of TMDCs with a sizable bandgap. Here we introduce few-layer SnS2 field-effect transistors (FETs) fabricated using micromechanical exfoliation method. The FETs show n-type behavior, the on/off ratio exceeding 0.54×104 and the carrier mobility is 0.61 cm2V−1s−1. The electronic and optical characteristics of SnS2 flakes with a finite bandgap illustrate their potential applications in optoelectronics device.