Effect of pressure on some optical properties of GaxIn1−xP semiconductors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/500/i=18/a=182042/pdf
Reference23 articles.
1. Compositional dependence of the elastic constants and the Poisson ratio of GaxIn1−xSb
2. Electronic properties of semiconductor alloy systems
3. Study and application of reactive ion etching on GaInP/InGaAs/GaInP quantum-well HEMTs
4. High-speed, low-noise InGaP/GaAs heterojunction bipolar transistors
5. High performance GaAs/GaInP heterostructure bipolar transistors grown by low-pressure metal-organic chemical vapour deposition
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. First principle investigation of stuctural, electronic, and thermoelectric properties of Ga1-x In x P (x = 0.0 to 1.0) alloys;Physica Scripta;2022-01-17
2. Experimental studies of the effects of atomic ordering in epitaxial Ga x In1 – x P alloys on their optical properties;Semiconductors;2017-09
3. Experimental investigations of atomic ordering effects in the epitaxial GaxIn1-xP, coherently grown on GaAs (100) substrates;Physica B: Condensed Matter;2017-03
4. Temperature Dependence of Refractive Index of Al1–xGaxN Semiconductors;Advanced Science Letters;2016-11-01
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