Study and application of reactive ion etching on GaInP/InGaAs/GaInP quantum-well HEMTs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Overview of recent development of HEMTs in the mm-wave range
2. Ga/sub 0.51/In/sub 0.49/P/GaAs HEMT's exhibiting good electrical performance at cryogenic temperatures
3. Pseudomorphic n-InGaP/InGaAs/GaAs high electron mobility transistors for low-noise amplifiers
4. Dry etching induced damage on vertical sidewalls of GaAs channels
5. Nonradiative damage measured by cathodoluminescence in etched multiple quantum well GaAs/AlGaAs quantum dots
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1. Size-dependent sidewall defect effect of GaN blue micro-LEDs by photoluminescence and fluorescence lifetime imaging;Optics Letters;2023-09-11
2. High Performance AlGaInP-Based Micro-LED Displays With Novel Pixel Structures;IEEE Photonics Technology Letters;2021-12-15
3. Investigation of sidewall damage induced by reactive ion etching on AlGaInP MESA for micro-LED application;Journal of Luminescence;2021-06
4. Characterization of micro-pixelated InGaP/AlGaInP quantum well structures;Light-Emitting Devices, Materials, and Applications XXIV;2020-02-25
5. Sub-Nanometer Controllable Fabrication of Freestanding Hetero-Structures Through Plasma-Matter Interaction During Ion Irradiation;Journal of Nanoscience and Nanotechnology;2015-07-01
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