Causal self-energies for NEGF modelling of quantum nanowires
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/526/i=1/a=012001/pdf
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1. Programmable nanowire circuits for nanoprocessors
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5. Study of individual phonon scattering mechanisms and the validity of Matthiessen's rule in a gate-all-around silicon nanowire transistor
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1. Modelling of InAs nanowire and MOSFET under phonon emission and absorption by using NEGF formalism;Superlattices and Microstructures;2021-02
2. Quantum Transport in a Silicon Nanowire FET Transistor: Hot Electrons and Local Power Dissipation;Materials;2020-07-26
3. Dissipative non-equilibrium Green function methodology to treat short range Coulomb interaction: current through a 1D nanostructure;Journal of Physics: Condensed Matter;2018-06-29
4. Büttiker probes and the recursive Green's function: An efficient approach to include dissipation in general configurations;Physical Review B;2018-02-26
5. Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective;Journal of Computational Electronics;2016-07-21
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