Phonon-limited and effective low-field mobility in n- and p-type [100]-, [110]-, and [111]-oriented Si nanowire transistors
Author:
Funder
U.S. Department of Energy
National Science Foundation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3540689
Reference16 articles.
1. High Performance Silicon Nanowire Field Effect Transistors
2. Subband decomposition approach for the simulation of quantum electron transport in nanostructures
3. Full-quantum simulation of hole transport and band-to-band tunneling in nanowires using the k⋅p method
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