Simulation of the EXAFS and Raman spectra of InxGa1-xN utilizing the equation of motion routine of FEFF8.
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/712/i=1/a=012126/pdf
Reference18 articles.
1. Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion
2. Atomic structure and phase stability ofInxGa1−xNrandom alloys calculated using a valence-force-field method
3. Structural analysis of InGaN epilayers
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1. Insights into the effect of cobalt substitution into copper-manganese oxides on enhanced benzene oxidation activity;Applied Catalysis B: Environmental;2023-04
2. Scaling of phonon frequencies and electron binding energies with interatomic distances in InxGa1−xN;Journal of Applied Physics;2021-11-28
3. X-ray diffraction on La3Ga5SiO14 crystal modulated by SAW near the K absorption edge of Ga;Applied Physics Letters;2020-04-27
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