Vacancy defects in III-nitrides: what does positron annihilation spectroscopy reveal?
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/265/i=1/a=012003/pdf
Reference45 articles.
1. Observation of Native Ga Vacancies in GaN by Positron Annihilation
2. Chapter 5 Positron Annihilation Spectroscopy of Defects in Semiconductors
3. Polarity dependent properties of GaN layers grown by hydride vapor phase epitaxy on GaN bulk crystals
4. Introduction and recovery of point defects in electron-irradiated Te- and Si-doped GaAs studied by positron lifetime spectroscopy
5. Gallium vacancies and gallium antisites as acceptors in electron-irradiated semi-insulating GaAs
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