Polarity dependent properties of GaN layers grown by hydride vapor phase epitaxy on GaN bulk crystals-Reference-Cited by-同舟云学术

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Polarity dependent properties of GaN layers grown by hydride vapor phase epitaxy on GaN bulk crystals

Published:2003-11 Issue:2 Volume:240 Page:289-292
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Tuomisto F.,Suski T.,Teisseyre H.,Krysko M.,Leszczynski M.,Lucznik B.,Grzegory I.,Porowski S.,Wasik D.,Witowski A.,Gebicki W.,Hageman P.,Saarinen K.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on shallow donor-type impurities of GaN epilayer regrown by epitaxial lateral overgrowth technique;Applied Physics Letters;2021-01-04

2. Highly Stable Bulk GaN Photoanode Grown by Hydride Vapor-Phase Epitaxy for Photoelectrochemical Water Splitting;Journal of The Electrochemical Society;2019

3. Group III Nitrides;Springer Handbook of Electronic and Photonic Materials;2017

4. Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties;Journal of Applied Physics;2014-04-21

5. Computer study of the spectral characteristics and structures of (GaN)54(SiO2)50 nanoparticles;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2013-07

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