The contribution of the In distribution in InGaN/GaN MQW to the “green gap” phenomenon
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/1199/i=1/a=012015/pdf
Reference5 articles.
1. Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap
2. Development of high performance green c-plane III-nitride light-emitting diodes
3. Significant increase of quantum efficiency of green InGaN quantum well by realizing step-flow growth
4. On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena
5. Defect States Induced in GaN-Based Green Light Emitting Diodes by Electron Irradiation
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1. Contribution of Zone Fluctuation Potential and Disordering of Heteroboundaries to the Decreased Efficiency of Nitride-Based Leds;Journal of Applied Spectroscopy;2023-03
2. Enhancement in Structural and Electroluminescence Properties of Green Light Emission for Semipolar (11–22) InGaN/GaN Based Grown on m-Plane Sapphire via Low Temperature Ammonia Treatment (LTAT);Photonics;2022-09-08
3. Pulsed Laser Deposition of In0.1Ga0.9N Nanoshapes by Nd:YAG Technique;Coatings;2020-05-10
4. The impact of the surface morphology on optical features of the green emitting InGaN/GaN multiple quantum wells;Journal of Crystal Growth;2019-08
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