The impact of the surface morphology on optical features of the green emitting InGaN/GaN multiple quantum wells-Reference-Cited by-同舟云学术

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The impact of the surface morphology on optical features of the green emitting InGaN/GaN multiple quantum wells

Published:2019-08 Issue: Volume:520 Page:82-84
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Shmidt N.M.,Chernyakov A.E.,Tal'nishnih N.A.,Nikolaev A.E.,Sakharov A.V.,Petrov V.N.,Gushchina E.V.,Shabunina E.I.

Funder

Russian Foundation for Basic Research

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. Development of high performance green c-plane III-nitride light-emitting diodes;Alhassan;Opt. Express,2018

2. Temperature-dependent recombination coefficients in InGaN light-emitting diodes: hole localization, auger processes, and the green gap;Nippert;Appl. Phys. Lett.,2016

3. Significant increase of quantum efficiency of green InGaN quantum well by realizing step-flow growth;Tian;Appl. Phys. Lett.,2017

4. Enhanced light output power of green LEDs employing AlGaN interlayer in InGaN/GaN MQW structure on sapphire (0001) substrate;Shioda;Phys. Status Solidi A,2012

5. Performance enhancement of blue light-emitting diodes with InGaN/GaN multi-quantum wells grown on Si substrates by inserting thin AlGaN interlayers;Kimura;J. Appl. Phys.,2016

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1. Carrier Recombination in Nitride-Based Light-Emitting Devices: Multiphonon Processes, Excited Defects, and Disordered Heterointerfaces;Nanomaterials;2024-06-23

2. Contribution of Zone Fluctuation Potential and Disordering of Heteroboundaries to the Decreased Efficiency of Nitride-Based Leds;Journal of Applied Spectroscopy;2023-03

3. Peculiarities of low frequency noise and non-radiative recombination in AlGaN QWs emitting at 280 nm;ST PETER POLY U J-PH;2023

4. Influences of gallium and nitrogen partial pressure on step-bunching and step-meandering morphology of InGaN quantum barrier layer;Materials Today Communications;2021-12

5. Several processes participating in a decrease and the droop of external quantum efficiency in green InGaN/GaN MQW structures;Journal of Physics: Conference Series;2021-12-01

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