UV laser controlled quantum well intermixing in InAlGaAs/GaAs heterostructures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/59/i=1/a=129/pdf
Reference13 articles.
1. Index‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers fabricated by vacancy‐enhanced impurity‐induced layer disordering from an internal (Si2)y(GaAs)1−ysource
2. Impurity-free intermixing in compressively strained InGaAsP multiple quantum well structures
3. Photonic integrated circuits fabricated using ion implantation
4. Low-energy ion-implantation-induced quantum-well intermixing
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1. Photoluminescence emission in the red band at low temperatures in type-island layers of the Al0.32Ga0.68 As/Al0.29Ga0.71As/GaAs structure obtained via liquid phase epitaxy, and its description by the mechanism of Stranski-Krastanov growth;Optical Materials;2022-12
2. Bandgap Engineering of Quantum Semiconductor Microstructures;Handbook of Laser Micro- and Nano-Engineering;2021
3. Bandgap Engineering of Quantum Semiconductor Microstructures;Handbook of Laser Micro- and Nano-Engineering;2020
4. Excimer laser induced quantum well intermixing: a reproducibility study of the process for fabrication of photonic integrated devices;Optics Express;2015-01-16
5. Atomistic Model of Fluorescence Intermittency of Colloidal Quantum Dots;Physical Review Letters;2014-04-16
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