Index‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers fabricated by vacancy‐enhanced impurity‐induced layer disordering from an internal (Si2)y(GaAs)1−ysource-Reference-Cited by-同舟云学术

Index‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers fabricated by vacancy‐enhanced impurity‐induced layer disordering from an internal (Si2)y(GaAs)1−ysource

Published:1987-03-09 Issue:10 Volume:50 Page:609-611
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Guido L. J.,Jackson G. S.,Plano W. E.,Hsieh K. C.,Holonyak N.,Burnham R. D.,Epler J. E.,Thornton R. L.,Paoli T. L.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.98096

Reference15 articles.

1. Disorder of an AlAs‐GaAs superlattice by impurity diffusion

2. IR‐red GaAs‐AlAs superlattice laser monolithically integrated in a yellow‐gap cavity

3. Disorder of an AlxGa1−xAs‐GaAs superlattice by donor diffusion

4. Stripe‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure lasers defined by Si diffusion and disordering

5. Impurity‐disordered, coupled‐stripe AlxGa1−xAs‐GaAs quantum well laser

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