Gas ratio effects on the Si etch rate and profile uniformity in an inductively coupled Ar/CF4plasma
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics
Link
http://stacks.iop.org/0963-0252/22/i=1/a=015017/pdf
Reference50 articles.
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3. Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor
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5. Study on polymeric neutral species in high-density fluorocarbon plasmas
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