1-Grad total dose evaluation of 65 nm CMOS technology for the HL-LHC upgrades
Author:
Publisher
IOP Publishing
Subject
Mathematical Physics,Instrumentation
Link
http://stacks.iop.org/1748-0221/10/i=05/a=C05009/pdf
Reference8 articles.
1. Total ionizing dose effects in MOS oxides and devices
2. Total Dose Effects in CMOS Trench Isolation Regions
3. Characterization of a commercial 65 nm CMOS technology for SLHC applications
4. Radiation-induced edge effects in deep submicron CMOS transistors
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