1. Performance of honeywell RICMOS-IV SOI transistors after irradiation to 27 Mrad(Si) by 63.3 MeV protons;Pellett;Nucl. Phys. B,1999
2. Study of device parameters for analog IC design in a 1.2 mu m CMOS-SOI technology after 10 Mrad (for hadron colliders);Faccio;IEEE Trans. Nucl. Sci.,1992
3. DMILL, a mixed analog-digital radiation-hard BICMOS technology for high energy physics electronics;Dentan,1995
4. Radiation Hardened Transistor Characteristics for Applications at LHC and Beyond;Millmore,1997
5. Design and performance of the ABCD chip for the binary readout of silicon strip detectors in the ATLAS semiconductor tracker;Dabrowski,1999