Charge collection properties in an irradiated pixel sensor built in a thick-film HV-SOI process-Reference-Cited by-同舟云学术

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Charge collection properties in an irradiated pixel sensor built in a thick-film HV-SOI process

Published:2017-10-25 Issue:10 Volume:12 Page:P10020-P10020
ISSN:1748-0221
Container-title:Journal of Instrumentation
language:
Short-container-title:J. Inst.

Author:

Hiti B.,Cindro V.,Gorišek A.,Hemperek T.,Kishishita T.,Kramberger G.,Krüger H.,Mandić I.,Mikuž M.,Wermes N.,Zavrtanik M.

Publisher

IOP Publishing

Subject

Mathematical Physics,Instrumentation

Link

http://stacks.iop.org/1748-0221/12/i=10/a=P10020/pdf

Reference39 articles.

1. CMOS active pixel image sensor with CCD performance

2. Experimental confirmation of a new semiconductor detector principle

3. CMS barrel pixel detector overview

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1. Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI- and Cz-silicon;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2023-11

2. Bistable Boron-Related Defect Associated with the Acceptor Removal Process in Irradiated p-Type Silicon—Electronic Properties of Configurational Transformations;Sensors;2023-06-19

3. Microscopic origin of the acceptor removal in neutron-irradiated Si detectors - An atomistic simulation study;Acta Materialia;2022-12

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5. The Boron–Oxygen (BᵢOᵢ) Defect Complex Induced by Irradiation With 23 GeV Protons in p-Type Epitaxial Silicon Diodes;IEEE Transactions on Nuclear Science;2022-03

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