In situ trap properties in CCDs: the donor level of the silicon divacancy
Author:
Publisher
IOP Publishing
Subject
Mathematical Physics,Instrumentation
Link
http://stacks.iop.org/1748-0221/12/i=01/a=P01025/pdf
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1. The Gaia mission: science, organization and present status
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4. Proton Damage Comparison of an e2v Technologies n-channel and p-channel CCD204
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