10 μ m-thick four-quadrant transmissive silicon photodiodes for beam position monitor application: electrical characterization and gamma irradiation effects-Reference-Cited by-同舟云学术

10 μ m-thick four-quadrant transmissive silicon photodiodes for beam position monitor application: electrical characterization and gamma irradiation effects

Published:2017-01-02 Issue:01 Volume:12 Page:C01004-C01004
ISSN:1748-0221
Container-title:Journal of Instrumentation
language:
Short-container-title:J. Inst.

Author:

Rafí J.M.,Pellegrini G.,Quirion D.,Hidalgo S.,Godignon P.,Matilla O.,Juanhuix J.,Fontserè A.,Molas B.,Pothin D.,Fajardo P.

Publisher

IOP Publishing

Subject

Mathematical Physics,Instrumentation

Link

http://stacks.iop.org/1748-0221/12/i=01/a=C01004/pdf

Reference12 articles.

1. Transmissive x-ray beam position monitors with submicron position- and submillisecond time resolution

2. 10μm thin transmissive photodiode produced by ALBA Synchrotron and IMB-CNM-CSIC

3. Design and construction of a system for sun-tracking

4. Processing of ultra-thin silicon sensors for future e/sup +/e/sup -/ linear collider experiments

5. 2 MeV electron irradiation effects on the electrical characteristics of metal–oxide–silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics

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