Charge collection efficiency study on neutron-irradiated planar silicon carbide diodes via UV-TCT

Author:

Gaggl P.ORCID,Bergauer T.ORCID,Göbel M.,Thalmeier R.,Villa M.,Waid S.

Funder

Österreichische Forschungsförderungsgesellschaft

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference21 articles.

1. Material science and device physics in SiC technology for high-voltage power devices;Kimoto;Japan. J. Appl. Phys.,2015

2. Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications;Kimoto,2014

3. Threshold displacement energies and displacement cascades in 4H-SiC: Molecular dynamic simulations;Li;AIP Adv.,2019

4. Silicon carbide and its use as a radiation detector material;Nava;Meas. Sci. Technol.,2008

5. Centro nacional de micróelectronica,2022

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