Monolithic pixel development in TowerJazz 180 nm CMOS for the outer pixel layers in the ATLAS experiment-Reference-Cited by-同舟云学术

Monolithic pixel development in TowerJazz 180 nm CMOS for the outer pixel layers in the ATLAS experiment

Published:2018-01-19 Issue:01 Volume:13 Page:C01023-C01023
ISSN:1748-0221
Container-title:Journal of Instrumentation
language:
Short-container-title:J. Inst.

Author:

Berdalovic I.,Bates R.,Buttar C.,Cardella R.,Plaja N. Egidos,Hemperek T.,Hiti B.,Hoorne J.W. van,Kugathasan T.,Mandic I.,Maneuski D.,Tobon C.A. Marin,Moustakas K.,Musa L.,Pernegger H.,Riedler P.,Riegel C.,Schaefer D.,Schioppa E.J.,Sharma A.,Snoeys W.,Sanchez C. Solans,Wang T.,Wermes N.

Publisher

IOP Publishing

Subject

Mathematical Physics,Instrumentation

Link

http://stacks.iop.org/1748-0221/13/i=01/a=C01023/pdf

Reference10 articles.

1. Charged particle detection performances of CMOS pixel sensors produced in a 0.18μm process with a high resistivity epitaxial layer

2. Monolithic active pixel sensor development for the upgrade of the ALICE inner tracking system

3. A process modification for CMOS monolithic active pixel sensors for enhanced depletion, timing performance and radiation tolerance

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