MALTA monolithic pixel sensors in TowerJazz 180 nm technology

Author:

Solans Sánchez C.ORCID,Allport P.,Asensi Tortajada I.ORCID,Berlea D.V.ORCID,Bortoletto D.,Dachs F.,Dao V.,Denizli H.ORCID,Dobrijevic D.,Dyndal M.,LeBlanc M.,Flores Sanz de Acedo L.,Gabrielli A.,Gonella L.,Munker M.,Oyulmaz K.,Pernegger H.,Riedler P.ORCID,Sandaker H.,Sharma A.ORCID,Snoeys W.,Suligoj T.,van Rijnbach M.,Worm S.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

1. Monolithic pixel development in TowerJazz 180 nm CMOS for the outer pixel layers in the ATLAS experiment;Berdalovic;JINST,2018

2. A process modification for CMOS monolithic active pixel sensors for enhanced depletion, timing performance and radiation tolerance;Snoeys;NIM A,2017

3. M. Munker, et al. Simulations of CMOS pixel sensors with a small collection electrode, improved for a faster charge collection and increased radiation tolerance.

4. Radiation hard monolithic CMOS sensors with small electrodes for High Luminosity LHC;Pernegger;NIM A,2021

5. Measurement results of the MALTA monolithic pixel detector;Schioppa;NIM A,2019

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