Cryogenic characterization of 180 nm CMOS technology at 100 mK

Author:

Huang R.G.,Gnani D.,Grace C.,Kolomensky Yu.G.,Mei Y.,Papadopoulou A.

Publisher

IOP Publishing

Subject

Mathematical Physics,Instrumentation

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Investigation of long channel bulk MOSFETs threshold voltage model down to 10 mK and key analog parameters at 4 K;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-05

2. Overview of Cryogenic Operation in Nanoscale Technology Nodes;2023 IEEE 14th Latin America Symposium on Circuits and Systems (LASCAS);2023-02-27

3. Revisiting Dynamic Logic—A True Candidate for Energy-Efficient Cryogenic Operation in Nanoscaled Technologies;IEEE Transactions on Circuits and Systems I: Regular Papers;2023

4. Parameter extraction in a 65nm nMOSFET technology from 300 K down to 3.8 K;2022 IEEE Latin American Electron Devices Conference (LAEDC);2022-07-04

5. Cryogenic Calorimetric Signal Readout with 180nm CMOS at 20 mK;2022 IEEE 15th Workshop on Low Temperature Electronics (WOLTE);2022-06-06

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