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A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology

  • Published:2019-11-06 Issue:11 Volume:14 Page:P11008-P11008
  • ISSN:1748-0221
  • Container-title:Journal of Instrumentation
  • language:
  • Short-container-title:J. Inst.

Author:

Iacobucci G.,Cardarelli R.,Débieux S.,Bello F.A. Di,Favre Y.,Hayakawa D.,Kaynak M.,Nessi M.,Paolozzi L.,Rücker H.,Sultan D.M.S.,Valerio P.

Publisher

IOP Publishing

Subject

Mathematical Physics,Instrumentation

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Monolithic CMOS Sensors for high energy physics — Challenges and perspectives;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2023-11

2. Novel high-speed monolithic silicon detector for particle physics;Journal of Instrumentation;2023-05-01

3. 20 ps time resolution with a fully-efficient monolithic silicon pixel detector without internal gain layer;Journal of Instrumentation;2023-03-01

4. Testbeam results of the Picosecond Avalanche Detector proof-of-concept prototype;Journal of Instrumentation;2022-10-01

5. Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology;Journal of Instrumentation;2022-02-01
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