Author:
Iacobucci G.,Paolozzi L.,Valerio P.,Moretti T.,Cadoux F.,Cardarelli R.,Cardella R.,Débieux S.,Favre Y.,Ferrere D.,Gonzalez-Sevilla S.,Gurimskaya Y.,Kotitsa R.,Magliocca C.,Martinelli F.,Milanesio M.,Münker M.,Nessi M.,Picardi A.,Saidi J.,Rücker H.,Vicente Barreto Pinto M.,Zambito S.
Abstract
Abstract
A monolithic silicon pixel detector prototype has been
produced in the SiGe BiCMOS SG13G2 130 nm node technology by
IHP. The ASIC contains a matrix of hexagonal pixels with pitch of
approximately 100 μm. Three analog pixels were calibrated in
laboratory with radioactive sources and tested in a 180 GeV/c pion
beamline at the CERN SPS. A detection efficiency of
(99.9-0.2
+0.1)% was measured together with a time
resolution of (36.4 ± 0.8) ps at the highest preamplifier bias
current working point of 150 μA and at a sensor bias voltage
of 160 V. The ASIC was also characterized at lower bias voltage and
preamplifier current.
Subject
Mathematical Physics,Instrumentation
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