Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors
Author:
Publisher
IOP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://iopscience.iop.org/article/10.1088/0253-6102/54/4/33/pdf
Reference21 articles.
1. An analytic potential model for symmetric and asymmetric DG MOSFETs
2. Explicit Continuous Models for Double-Gate and Surrounding-Gate MOSFETs
3. Scaling of Nanowire Transistors
4. A numerical Schrödinger–Poisson solver for radially symmetric nanowire core–shell structures
5. Single, double and surround gate vertical MOSFETs with reduced parasitic capacitance
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