Design and Simulation Analysis of NWFET for Digital Application

Abstract

This chapter presents the design and simulation analysis nanowire-based FET (NWFET) for best possible Ig-Vgs characteristics. A NWFET is a device in which channel is wire-like structure with diameter or lateral dimension in nanometer (10-9 m) range. Performance analysis has been done for various design and process parameters variation to propose optimized parameter for best performance. Although a lot of focus has been put on homogenous Si based NWFETs, there has been a rising interest in III-V NWFETs. This is mainly due to the excellent carrier transport properties are provided by these materials. NWFETs have ability to suppress SCEs and are also good in suppressing OFF-current (IOFF), because of gate all around (GAA) configuration. Secondly, NWFETs have large ON-current (ION) due to quasi one-dimensional (1D) conduction of NWs, and as a result of low carrier scattering, conduction of NWs-based devices is very large.