Transient and stable species kinetics in pulsed cc-rf CF4/H2plasmas and their relation to surface processes
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/40/i=23/a=020/pdf
Reference39 articles.
1. Effect of H2 addition on surface reactions during CF4/H2 plasma etching of silicon and silicon dioxide films
2. Impact of plasma processing on integrated circuit technology migration: From 1 μm to 100 nm and beyond
3. Surface interactions of CF2 radicals during deposition of amorphous fluorocarbon films from CHF3 plasmas
4. Fluorinated amorphous carbon films for low permittivity interlevel dielectrics
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