Plasma etch challenges with new EUV lithography material introduction for patterning for MOL and BEOL

Author:

Lee Changwoo,Nagabhirava Bhaskar,Goss Michael,Wang Peng,Friddle Phil,Schmitz Stafan,Wu Jian,Yang Richard,Mignot Yann,Rassoul Nouradine,Hamieh Bassem,Beique Genevieve,Labonte Andre,Labelle Catherine,Arnold John,Mucci John

Publisher

SPIE

Reference10 articles.

1. Plasma etch challenges for porous low-k materials for 32nm and beyond

2. Effect of simultaneous source and bias pulsing in inductively coupled plasma etchin,g;Agarwal,10

3. A novel approach for negative ion analysis using 160 GHz microwave interferometry and laser photodetachment in oxygen cc-rf plasmas,;Küllig,2010

4. Transient and stable species kinetics in pulsed cc-rf CF4/H2 plasmas and their relation to surface processes,;Gabriel,2007

5. Pulsed plasmas as a method to improve uniformity during materials processing,;Subramonium,2001

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Introduction of pre-etch deposition techniques in EUV patterning;Advanced Etch Technology for Nanopatterning VII;2018-04-09

2. Patterning options for N7 logic: prospects and challenges for EUV;SPIE Proceedings;2015-09-04

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