Characteristics of ZnO : As/GaN heterojunction diodes obtained by PA-MBE-Reference-Cited by-同舟云学术

Characteristics of ZnO : As/GaN heterojunction diodes obtained by PA-MBE

Published:2012-12-06 Issue:3 Volume:46 Page:035101
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Przezdziecka E,Wierzbicka A,Reszka A,Goscinski K,Droba A,Jakiela R,Dobosz D,Krajewski T A,Kopalko K,Sajkowski J M,Stachowicz M,Pietrzyk M A,Kozanecki A

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference37 articles.

1. Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates

2. Electroluminescence at 375nm from a ZnO∕GaN:Mg∕c-Al2O3 heterojunction light emitting diode

3. Materials characterization of n - ZnO / p - GaN : Mg / c - Al2O3 UV LEDs grown by pulsed laser deposition and metal–organic chemical vapor deposition

4. A new approach to white light emitting diodes of p-GaN/i-ZnO/n-ZnO heterojunctions

5. Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanoscale Morphology of Short-Period {CdO/ZnO} Superlattices Grown by MBE;Crystal Growth & Design;2021-12-27

2. Current Transport Mechanisms in Zinc Oxide/Silicon Carbide Heterojunction Light‐Emitting Diodes;physica status solidi (b);2020-06-24

3. The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors;Acta Physica Polonica A;2019-12

4. Deep levels in the MBE ZnO:As/n-GaN diodes – Photoluminescence, electrical properties and deep level transient spectroscopy;Journal of Alloys and Compounds;2018-04

5. High mobility ultrathin ZnO p–n homojunction modulated by Zn 0.85 Mg 0.15 O quantum barriers;Chinese Physics B;2018-03