Materials characterization of n - ZnO / p - GaN : Mg / c - Al2O3 UV LEDs grown by pulsed laser deposition and metal–organic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
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3. Fabrication and characterization of heteroepitaxial p-n junction diode composed of wide-gap oxide semiconductors p-ZnRh2O4/n-ZnO
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4. The impact of different ZnO growth methods on the electrical and optical properties of a n-ZnO/p-GaN:Mg/c-plane sapphire UV LED;RSC Adv.;2014
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