Twinning in GaAsSb grown on (1 1 1)B GaAs by molecular beam epitaxy
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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1. Effects of Bi Irradiation on the Molecular Beam Epitaxy Growth of GaSb on Ge (111) Vicinal Substrates;physica status solidi (a);2019-08-08
2. GaAs (1 1 1) epilayers grown by MBE on Ge (1 1 1): Twin reduction and polarity;Journal of Crystal Growth;2019-08
3. Raman spectroscopy and atomic force microscopy study of interfacial polytypism in GaP/Ge(111) heterostructures;Applied Surface Science;2018-01
4. Correlation between surface reconstruction and polytypism in InAs nanowire selective area epitaxy;Physical Review Materials;2017-12-26
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