Self-catalyst assisted and catalyst-free epitaxial growth of InAs on Ge (111): Role of substrate surface and evolution of polytypism-Reference-Cited by-同舟云学术

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Self-catalyst assisted and catalyst-free epitaxial growth of InAs on Ge (111): Role of substrate surface and evolution of polytypism

Published:2017-11 Issue:6 Volume:35 Page:061501
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Pal Suparna,Mukherjee Chandrachur,Sathe Vasant G.,Kumar Ravi,Tiwari Pragya,Dixit Vijay Kumar,Sharma Tarun Kumar

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4996104

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multi-technique characterisation of InAs-on-GaAs wafers with circular defect pattern;Opto-Electronics Review;2024-01-03

2. Binder-Free ZnO Cathode synthesized via ALD by Direct Growth of Hierarchical ZnO Nanostructure on Current Collector for High-Performance Rechargeable Aluminium-Ion Batteries;ChemistrySelect;2018-11-28

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