Photoluminescence in InAsN epilayers grown by molecular beam epitaxy
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/41/i=13/a=132002/pdf
Reference18 articles.
1. Gas-Source Molecular Beam Epitaxy of $\bf GaN_{\ninmbi x}As_{1-{\ninmbi x}}$ Using a N Radical as the N Source
2. Band Anticrossing in GaInNAs Alloys
3. The Physics and Technology of Dilute Nitrides
4. One-dimensional photonic crystals in reflection geometry for optical applications
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1. Strained-layer quantum well materials grown by MOCVD for diode laser application;Progress in Quantum Electronics;2021-01
2. Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode;Applied Physics Letters;2020-04-06
3. Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP;Applied Physics Letters;2015-06-08
4. In(AsN) mid-infrared emission enhanced by rapid thermal annealing;Infrared Physics & Technology;2015-01
5. Mid-infrared photoluminescence of InAsN dilute nitride alloys grown by LPE and MBE;Infrared Physics & Technology;2012-09
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